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| J309, J310 Preferred Device JFET VHF/UHF Amplifiers N-Channel -- Depletion Features * Pb-Free Packages are Available* MAXIMUM RATINGS Rating Drain -Source Voltage Gate -Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25C Derate above = 25C Junction Temperature Range Storage Temperature Range Symbol VDS VGS IGF PD TJ Tstg Value 25 25 10 350 2.8 -65 to +125 -65 to +150 Unit Vdc Vdc mAdc mW mW/C C C http://onsemi.com 1 DRAIN 3 GATE 2 SOURCE Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1 2 3 TO-92 CASE 29-11 STYLE 5 MARKING DIAGRAM J3xx AYWW G G J3xx = Device Code xx = 09 or 10 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 1 March, 2006 - Rev. 1 Publication Order Number: J309/D J309, J310 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate -Source Breakdown Voltage (IG = -1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = -15 Vdc, VDS = 0, TA = 25C) (VGS = -15 Vdc, VDS = 0, TA = +125C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero -Gate -Voltage Drain Current(1) (VDS = 10 Vdc, VGS = 0) Gate-Source Forward Voltage (VDS = 0, IG = 1.0 mAdc) SMALL- SIGNAL CHARACTERISTICS Common-Source Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common-Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common-Gate Power Gain (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common-Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common-Gate Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common-Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Common-Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Common-Gate Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Common-Gate Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Gate-Drain Capacitance (VDS = 0, VGS = -10 Vdc, f = 1.0 MHz) Gate-Source Capacitance (VDS = 0, VGS = -10 Vdc, f = 1.0 MHz) FUNCTIONAL CHARACTERISTICS Equivalent Short-Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 3.0%. en - 10 - nV Hz J309 J310 gog J309 J310 Cgd Cgs - - - - 100 150 1.8 4.3 - - 2.5 5.0 pF pF J309 J310 gos gfg - - 13000 12000 - - mmhos Re(yis) J309 J310 Re(yos) Gpg Re(yfs) Re(yig) gfs 10000 8000 - - - - 20000 18000 250 mmhos mmhos - - - - - - 0.7 0.5 0.25 16 12 12 - - - - - - mmhos dB mmhos mmhos mmhos mmhos IDSS J309 J310 VGS(f) 12 24 - - - - 30 60 1.0 Vdc mAdc J309 J310 V(BR)GSS IGSS - - VGS(off) -1.0 -2.0 - - -4.0 -6.5 - - -1.0 -1.0 nAdc mAdc Vdc -25 - - Vdc Symbol Min Typ Max Unit http://onsemi.com 2 J309, J310 ORDERING INFORMATION Device J309 J309G J310 J310G J310RLRP J310RLRPG J310ZL1 J310ZL1G Package TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) TO-92 TO-92 (Pb-Free) 2000 Units / Tape & Ammo Box 2000 Units / Tape & Ammo Box 1000 Units / Bulk 1000 Units / Bulk Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 60 I D , DRAIN CURRENT (mA) VDS = 10 V 50 40 30 20 10 -5.0 IDSS +25 C +25 C TA = -55C 60 50 40 +150C +25 C -55 C 30 20 IDSS, SATURATION DRAIN CURRENT (mA) 70 70 Yfs , FORWARD TRANSCONDUCTANCE (mmhos) 35 30 25 20 15 10 +150C -55 C +150C +25 C VDS = 10 V f = 1.0 MHz TA = -55C +25 C +150C 10 0 0 5.0 0 5.0 4.0 3.0 2.0 1.0 0 -1.0 -4.0 -3.0 -2.0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS) VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 1. Drain Current and Transfer Characteristics versus Gate-Source Voltage Figure 2. Forward Transconductance versus Gate-Source Voltage http://onsemi.com 3 J309, J310 Yfs , FORWARD TRANSCONDUCTANCE mhos) ( 100 k Yfs 100 1.0 k Yos, OUTPUT ADMITTANCE ( mhos) 10 RDS CAPACITANCE (pF) 7.0 72 Cgs 4.0 48 120 R DS , ON RESISTANCE (OHMS) Yfs 10 k 96 1.0 k Yos VGS(off) = -2.3 V = VGS(off) = -5.7 V = 10 Cgd 1.0 0 10 24 100 0.01 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 3. Common-Source Output Admittance and Forward Transconductance versus Drain Current 30 VDS = 10 V ID = 10 mA TA = 25C 3.0 Figure 4. On Resistance and Junction Capacitance versus Gate-Source Voltage |S21|, |S11| 0.85 0.45 S22 |S12|, |S22| 0.060 1.00 |Y11|, |Y21 |, |Y22 | (mmhos) 24 2.4 Y12 (mmhos) Y11 0.79 0.39 S21 VDS = 10 V ID = 10 mA TA = 25C S11 0.048 0.98 18 1.8 0.73 0.33 0.036 0.96 12 Y21 Y22 Y12 1.2 0.67 0.27 0.024 0.94 6.0 0.6 0.61 0.21 S12 0.012 0.92 0 100 200 300 500 f, FREQUENCY (MHz) 700 1000 0.55 0.15 100 200 300 500 f, FREQUENCY (MHz) 700 1000 0.90 Figure 5. Common-Gate Y Parameter Magnitude versus Frequency q21, q11 180 50 q22 170 40 q21 q12, q22 -2 0 87 -20 -40 -60 -80 -100 150 20 q12 q11 140 10 VDS = 10 V ID = 10 mA TA = 25C 700 -120 84 -140 -160 83 -180 -200 82 1000 85 86 Figure 6. Common-Gate S Parameter Magnitude versus Frequency q11, q12 -20 120 -40 100 -60 80 -80 60 q12 -100 40 -120 20 100 VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz) q11 -80 -100 1000 q21 q21 q21, q22 q11 q22 0 -20 -40 -60 160 30 130 0 100 200 300 500 f, FREQUENCY (MHz) 700 Figure 7. Common-Gate Y Parameter Phase-Angle versus Frequency Figure 8. S Parameter Phase-Angle versus Frequency http://onsemi.com 4 J309, J310 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- K XX G H V 1 D J C SECTION X-X N N DIM A B C D G H J K L N P R V STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 J309/D |
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